{"id":106292,"date":"2025-02-13T09:51:58","date_gmt":"2025-02-13T15:51:58","guid":{"rendered":"https:\/\/engineering.wisc.edu\/?post_type=tribe_events&p=106292"},"modified":"2025-02-18T09:52:19","modified_gmt":"2025-02-18T15:52:19","slug":"ece-seminar-series-in-advanced-semiconductor-materials-and-devices-dr-bei-shi","status":"publish","type":"tribe_events","link":"https:\/\/engineering.wisc.edu\/event\/ece-seminar-series-in-advanced-semiconductor-materials-and-devices-dr-bei-shi\/","title":{"rendered":"ECE Seminar Series in Advanced Semiconductor Materials and Devices – Dr. Bei Shi"},"content":{"rendered":"
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4610 Engineering Hall<\/p>\n\n\n\n

Monolithic Integration of III-V Optoelectronic Devices on Silicon by Selective
Area Heteroepitaxy<\/h3>\n\n\n\n

Abstract:<\/strong>
Silicon photonics is a cornerstone of next-generation data communications, heterogeneous computing, and quantum technologies, enabling large-scale photonic integration. On-chip optical interconnects in photonic integrated circuits (PICs) overcome the limitations of electronic interconnects, providing higher transmission speeds and bandwidth. However, silicon\u2019s indirect bandgap restricts its optoelectronic performance, necessitating the heterogeneous integration of III-V compound semiconductors to enhance PIC functionality, reduce energy consumption, and enable scalable applications. In this seminar, I will present my research on wafer-scale monolithic integration of III-V optoelectronic devices on silicon photonic chips leveraging advanced heteroepitaxy techniques. This includes high-quality III-V heteroepitaxy on silicon, with a focus on quantum dot (QD) lasers and indium gallium arsenide (InGaAs) shortwave infrared photodetectors. I will also introduce selective area heteroepitaxy of QD lasers on large- scale silicon photonic wafers and their monolithic integration with silicon nitride waveguides for low-loss facet coupling. Finally, I will discuss future perspectives on novel III-V\/Si heteroepitaxy and integration architectures for energy-efficient AI and quantum information processors.<\/p>\n\n\n\n

\"Bei
Bei Shi<\/figcaption><\/figure>\n\n\n\n

Bio:
<\/strong>Bei Shi is a Principal Scientist at Aeluma, Inc., a Santa Barbara-based startup commercializing large-scale III-V materials and devices integration on silicon, and a Research Specialist at University of California, Santa Barbara (UCSB). He earned his Ph.D. from The Hong Kong University of Science and Technology (HKUST) in 2018, advised by Prof. Kei May Lau, and later joined UCSB as a postdoctoral scholar under Prof. Jonathan Klamkin. His research focuses on heterogeneous integration of silicon photonics via advanced heteroepitaxy, quantum dot lasers for AI hardware and data centers, and shortwave infrared avalanche photodetectors for LiDAR, sensing, and quantum applications. Dr. Shi has authored 70+ journal and conference papers (Optica, ACS Photonics, APL), delivered three invited talks and served as a session chair\/committee member at major international conferences. Additionally, Dr. Shi filed six U.S. patents, served as a Guest Editor for MDPI Crystals\/Sensors, and received the 2019 Charles Kao Best Paper Award in Industry Innovation. He is also a Principal Investigator leading DoD- and NASA-funded projects to develop monolithic integration of quantum dot lasers on scalable silicon photonics platforms for diverse cutting-edge applications.<\/p>\n\n\n

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